Overview of Factory Silicon Carbide 4H SiC Wafer N-Type
Silicon Carbide (SiC), also known as carborundum, is a synthetic ceramic compound made up of silicon and carbon atoms. Known for its exceptional hardness, thermal conductivity, and resistance to chemical reactions and wear, SiC is a versatile material widely used in high-performance applications that demand superior physical and electronic properties. Its unique crystal structure, which can exist in several polytypes, contributes to its multifaceted utility across various industries.
Features of Factory Silicon Carbide 4H SiC Wafer N-Type
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Exceptional Hardness: Silicon carbide ranks just below diamond and boron carbide in hardness, making it an ideal abrasive material.
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High Thermal Conductivity: It is an excellent heat conductor, capable of dissipating heat rapidly, which is crucial for high-power electronic and semiconductor devices.
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Chemical Stability: Resistant to most acids, alkalis, and salt solutions, SiC maintains its properties even under harsh chemical environments.
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Wide Bandgap Semiconducting Material: As a wide bandgap semiconductor, it operates at higher temperatures and frequencies than conventional semiconductors like silicon.
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Mechanical Strength and Wear Resistance: Offers high mechanical strength and excellent wear resistance, suitable for mechanical seals, bearings, and pump components.
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Thermal Shock Resistance: Can withstand rapid temperature changes without cracking or degrading, important for applications involving cyclic heating and cooling.
(Factory Silicon Carbide 4H SiC Wafer N-Type)
Parameters of Factory Silicon Carbide 4H SiC Wafer N-Type
The “4H SiC Wafer N-Type” you mentioned is likely referring to silicon carbide (SiC) wafers that have been processed into an n-type silicon substrate, which has two primary characteristics:
* A negative electric field: An n-type silicon substrate creates a negative electric field in the substrate itself, which helps to reduce impurities and increase the quality of the semiconductor.
* High thermal conductivity: Silicon carbide has high thermal conductivity, meaning it can conduct heat efficiently without losing too much energy.
Overall, the “4H SiC Wafer N-Type” is a type of silicon carbide wafer with these properties. It is commonly used in a variety of applications, including electronics, aerospace, and industrial manufacturing.
(Factory Silicon Carbide 4H SiC Wafer N-Type)
Applications of Factory Silicon Carbide 4H SiC Wafer N-Type
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Semiconductor Devices: Used in high-voltage, high-frequency, and high-temperature power electronics, such as MOSFETs, Schottky diodes, and power modules.
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Abrasive Materials: As an abrasive grain in grinding wheels, sandpapers, and cutting tools due to its hardness and wear resistance.
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Refractories and Furnace Linings: In high-temperature furnaces and kilns because of its outstanding thermal stability and resistance to corrosion.
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Ceramic Armor: In lightweight armor systems due to its combination of hardness, toughness, and low density.
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Chemical Process Equipment: For pumps, valves, and seals in corrosive chemical environments where metals would corrode.
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Wire Sawing: As the abrasive medium in wire saws for slicing silicon wafers in the semiconductor industry and gemstones.
Company Profile
MyCarbides is a trusted global chemical material supplier & manufacturer with over 12-year-experience in providing super high-quality carbides and relative products.
The company has a professional technical department and Quality Supervision Department, a well-equipped laboratory, and equipped with advanced testing equipment and after-sales customer service center.
If you are looking for high-quality carbide materials and relative products, please feel free to contact us or click on the needed products to send an inquiry.
Payment Methods
L/C, T/T, Western Union, Paypal, Credit Card etc.
Shipment
It could be shipped by sea, by air, or by reveal ASAP as soon as repayment receipt.
FAQs of Factory Silicon Carbide 4H SiC Wafer N-Type
Q: How is Factory Silicon Carbide 4H SiC Wafer N-Type produced?
A: Factory Silicon Carbide 4H SiC Wafer N-Type is primarily synthesized through the Acheson process, which involves heating a mixture of silica sand and carbon (usually in the form of coke) in an electric furnace at high temperatures.
Q: Is Factory Silicon Carbide 4H SiC Wafer N-Type conductive?
A: Yes, Factory Silicon Carbide 4H SiC Wafer N-Type is a semiconductor material with unique electronic properties, including high breakdown voltage and thermal conductivity, making it suitable for power electronics.
Q: Can Factory Silicon Carbide 4H SiC Wafer N-Type be used in extreme environments?
A: Absolutely, SiC’s high temperature stability, resistance to radiation damage, and ability to withstand thermal shocks make it ideal for applications in space, nuclear reactors, and deep-well drilling.
Q: What gives Factory Silicon Carbide 4H SiC Wafer N-Type its unique properties?
A: The covalent bond structure of Factory Silicon Carbide 4H SiC Wafer N-Type, along with its tight crystal lattice, contributes to its hardness, high melting point, and resistance to wear and corrosion.
Q: Is Factory Silicon Carbide 4H SiC Wafer N-Type biocompatible?
A: SFactory Silicon Carbide 4H SiC Wafer N-Type has been investigated for biomedical applications due to its biocompatibility, inertness, and durability, with potential uses in orthopedic implants and surgical instruments.
(Factory Silicon Carbide 4H SiC Wafer N-Type)
